Phase Control Mosfet Power Module IC Netz Thyristor Diode Module
module ic TT425N12KOF powerblock
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages |
Tvj = -40°C... Tvj max |
VDRM,VRRM |
1000 1400
1200 1600
1800
|
V
V
V
|
Vorwärts-Stoßspitzensperrspannung non-repetitive peak forward off-state voltage |
Tvj = -40°C... Tvj max |
VDSM |
1000 1400
1200 1600
1800
|
V
V
V
|
Durchlaßstrom-Grenzeffektivwert maximum RMS on-state current |
Tvj =+25°C... Tvj max |
VRSM |
|
|
Durchlaßstrom-Grenzeffektivwert maximum RMS on-state current |
|
ITRMSM |
800 |
A |
Dauergrenzstrom average on-state current TC = 85°C TC = 74°C ITAVM 425 510 A A |
TC = 85°C
TC = 74°C
|
|
425
510
|
A
A
|
Stoßstrom-Grenzwert surge current |
Tvj = 25 °C tP = 10 ms
Tvj = Tvj max tP = 10 ms
|
ITSM |
14500
12500
|
A
A
|
Grenzlastintegral I²t-value |
Tvj = 25 °C tP = 10 ms
Tvj = Tvj max tP = 10 ms
|
I²t |
A²s
A²s
|
A
A
|
Kritische Stromsteilheit critical rate of rise of on-state current |
DIN IEC 747-6 f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs |
(dIT/dt)cr |
120
|
A/µs |
Kritische Spannungssteilheit critical rate of rise of off-state voltage |
Tvj = Tvj max, vD = 0,67 VDRM 6.Kennbuchstabe / 6th letter F |
(dvD/dt)cr |
1000 |
V/µs |
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Freiwerdezeit circuit commutated turn-off time |
Tvj = Tvj max, iTM = ITAVM vRM = 100 V, vDM = 0,67 VDRM dvD/dt = 20 V/µs, -diT/dt = 10 A/µs 5.Kennbuchstabe / 5th letter O |
tq |
typ 250 |
µs |
Isolations-Prüfspannung insulation test voltage |
RMS, f = 50 Hz, t = 1 min RMS, f = 50 Hz, t = 1 sec |
VISOL |
3.0
3.6
|
Kv
Kv
|
Luftselbstkühlung / Natural cooling 1 Modul pro Kühlkörper / 1 module per heatsink Kühlkörper / Heatsink type: KM 17 (120W)
Verstärkte Kühlung / Forced cooling 1 Modul pro Kühlkörper / 1 module per heatsink Kühlkörper / Heatsink type: KM17 (Papst 4650N)